Accession Number : AD0786914
Title : Nature of Secondary Radiation Defects in Silicon of the p-Type,
Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
Personal Author(s) : Vavilov,V. S. ; Mukeshev,B. N. ; Spitsyn,A. V.
Report Date : 20 SEP 1974
Pagination or Media Count : 8
Abstract : Samples of p-type silicon alloyed with boron, aluminum, or gallium, were irradiated at 78K with electrons having an energy of 1.5 MeV, and then subjected to isochronous annealing in the temperature range of 78 -- 700K. Information on annealing and the conditions of radiation defects were obtained from an analysis of the data on the carrier concentration, which in turn was determined by measuring the Hall effect and the electric conductivity.
Descriptors : *Silicon, *Semiconductors, *Radiation effects, Defects(Materials), Electrical conductivity, Translations, USSR, Electron irradiation
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE