Accession Number : AD0787255

Title :   Silicon Nitride: A Promising Material for Radome Applications.

Descriptive Note : Final rept.,

Corporate Author : ARMY MATERIALS AND MECHANICS RESEARCH CENTER WATERTOWN MASS

Personal Author(s) : Messier,Donald R. ; Wong,Philip

Report Date : SEP 1974

Pagination or Media Count : 8

Abstract : Dielectric properties of various reaction-sintered and hot-pressed silicon nitride specimens were measured at 10 GHz at room temperature, 1000F and 2000F. Dielectric constant values ranged from 5.5 to 9.3, and loss tangent values from 0.001 to 0.16. The major detrimental impurity was identified as residual unreacted silicon. (Author)

Descriptors :   *Silicon nitrides, *Radomes, Dielectric properties, Activated sintering, Hot pressing

Subject Categories : Electrical and Electronic Equipment
      Ceramics, Refractories and Glass

Distribution Statement : APPROVED FOR PUBLIC RELEASE