Accession Number : AD0787467

Title :   Improved Gallium Arsenide Light Emitting Diodes.

Descriptive Note : Rept. for 21 May 73-30 Jun 74,

Corporate Author : SPECTRONICS INC RICHARDSON TEX

Personal Author(s) : Mehal,Edward

Report Date : JUN 1974

Pagination or Media Count : 24

Abstract : The objective of the contract was to investigate Liquid Phase Epitaxial Process modifications which could lead to the high yield fabrication of high power domed LED's with high quantum efficiencies. The process modifications investigated included (1) growth in a slider boat, (2) growth of an additional p + layer and (3) growth of a p + GaAlAs epitaxial layer. The materials from the different growth methods were evaluated using a flat chip emitter and dome emitters were fabricated from the material which appeared most promising in the test procedure. The highest quantum efficiency devices were fabricated from material which did not have second layers grown on and which had p-layers which were greater than 0.002 inches thick. (Author)

Descriptors :   *Light emitting diodes, Gallium arsenides, Quantum efficiency, Epitaxial growth

Subject Categories : Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE