Accession Number : AD0787582
Title : Radiation Effects and Material Studies in PbSnTe.
Descriptive Note : Annual rept. 1 Aug 73-1 Sep 74,
Corporate Author : INTELCOM RAD TECH SAN DIEGO CALIF
Personal Author(s) : Harper,Howard T. ; Colwell,Joseph F. ; Green,Barry A. ; Leadon,Roland E. ; Naber,James A.
Report Date : 25 SEP 1974
Pagination or Media Count : 129
Abstract : The electrical and optical properties of Pb(1-x)Sn(x)Te were measured before, during, and after various electron, gamma, and neutron irradiations, and during the subsequent isochronal annealing. These sample types fell into two categories - those with initial carrier densities (> 10 to the 17 power/cc) at 80K (the solid-state recrystallized and epitaxial thin-film samples), and one with a low carrier density (less than 10 to the 17th power/cc) at 80K (a vapor-grown sample). A measurement of the energy bandgap from optical transmission studies on the high carrier density thin-film samples after an electron irradiation at 9K revealed an increase in the bandgap energy. Modeling of the changes in the electrical and optical properties explains the changes on the basis of defects introduced by the irradiation and of the general structure of the alloy. Correlating the radiation damage as a function of irradiating particles was pursued in an effort to provide a means of predicting the relative damage to be expected in various environments. (Modified author abstract)
Descriptors : *Semiconducting films, *Radiation effects, *Infrared detectors, Lead compounds, Tin compounds, Electrical properties, Optical properties, Electron irradiation, Gamma rays, Neutrons, Crystal defects, Luminescence, Photoconductivity, Band theory of solids, Tellurides
Subject Categories : Radiation and Nuclear Chemistry
Radioactiv, Radioactive Wastes & Fission Prod
Distribution Statement : APPROVED FOR PUBLIC RELEASE