Accession Number : AD0787599
Title : Reliability Testing of Electron Bombarded Semiconductor Diodes.
Descriptive Note : Technical rept.,
Corporate Author : WATKINS-JOHNSON CO PALO ALTO CALIF
Personal Author(s) : Smith,David H.
Report Date : 20 AUG 1974
Pagination or Media Count : 46
Abstract : Reliability tests of reverse biased semiconductor diodes operating in electron bombarded semiconductor devices are described. One device operating Class B at 20 W/ sq mm power dissipation density has been tested in excess of 10,000 hours. Another similar device is approaching 10,000 hours of operation. No degradation in performance characteristics has been observed in either device. The diodes used in these devices incorporate state-of-the-art passivation techniques including pillar supported integral metal beam shield. (Author)
Descriptors : *Semiconductor diodes, *Reliability(Electronics), *Electron tubes, Electron irradiation, Life tests, Semiconductor devices, Electron beams, Electron tubes
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE