Accession Number : AD0787646

Title :   Annealing of Sputtered Beta Silicon Carbide,

Corporate Author : AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS

Personal Author(s) : Berman,Irvin ; Marshall,Robert C. ; Ryan,Charles E.

Report Date : 01 OCT 1974

Pagination or Media Count : 8

Abstract : Using an RF sputtering and etching module silicon carbide was deposited upon the surface of (100) and (111) silicon, (111) (110) (100) tungsten, and (0001) alpha SiC. Almost all deposits were amorphous initially but after thermal annealing, the thin films on the (100) silicon and on (0001) alpha became single crystal layers. Silicodes of tungsten were formed on the tungsten substrates after annealing. (Author)

Descriptors :   *Silicon carbides, *Sputtering, *Annealing, Single crystals, Semiconducting films, Crystal growth, Crystal structure, Thin films, Amorphous materials, Substrates, Silicon, Tungsten

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE