Accession Number : AD0787647

Title :   Thin Films of alpha and beta Silicon Carbide Prepared by Liquid Epitaxy and by Sputtering,

Corporate Author : AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS

Personal Author(s) : Ryan,Charles E. ; Berman,Irvin ; Marshall,Robert C.

Report Date : JUN 1974

Pagination or Media Count : 10

Abstract : The preparation of thin films of alpha silicon carbide by a liquid epitaxy process is discussed. Silicon is used as a solvent at 2250C. The silicon carbide substrate is wetted by molten silicon saturated with carbon. As the silicon evaporates, the liquid layer supersaturates precipitating carbon to form an epitaxed SiC layer on the substrate. Experiments on the wettability of silicon carbide by molten vs. temperature and the time and pressure dependence of the process are discussed. The layers formed by liquid epitaxy are used as substrates for sputter deposited beta layers which are briefly described. (Modified author abstract)

Descriptors :   *Silicon carbides, *Epitaxial growth, Sputtering, Thin films, Semiconducting films, Substrates, Silicon, Carbon, Wetting

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE