Accession Number : AD0787729

Title :   Photoluminescence from Ion Implanted Silicon,

Corporate Author : ILLINOIS UNIV URBANA COORDINATED SCIENCE LAB

Personal Author(s) : Kirkpatrick,Conilee Gay

Report Date : AUG 1974

Pagination or Media Count : 118

Abstract : Photoluminescence studies have added new information on the nature of radiative defects resulting from the implantation of boron, phosphorus, nitrogen, carbon and oxygen ions into silicon. The influence of the species of the implanted ion, the substrate, and annealing character of the radiative centers provide substantiating evidence for the recent identification of peaks C (0.790 eV) and G (0.970 eV) with radiative recombination at a carbon modified A-center and carbon interstitialcy defect, respectively. (Modified author abstract)

Descriptors :   *SILICON, *PHOTOLUMINESCENCE, *ION IMPLANTATION, RADIATION EFFECTS, CRYSTAL DEFECTS, SEMICONDUCTORS, DOPING, BORON, PHOSPHORUS, NITROGEN, CARBON, ANNEALING, THESES

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE