Accession Number : AD0800045
Title : RELIABILITY TESTING AND PREDICTION TECHNIQUES FOR HIGH POWER SILICON TRANSISTORS.
Descriptive Note : Technical rept. no. 2, 20 Oct 65-19 Apr 66,
Corporate Author : TEXAS INSTRUMENTS INC DALLAS
Personal Author(s) : Fewer, D. R. ; Tomlinson, J. R.
Report Date : AUG 1966
Pagination or Media Count : 359
Abstract : Work performed is divided into two main parts: (1) a test and data analysis program designed to produce a method for reliability screening, and (2) a physics of failure program on fundamental mechanism causing device degradation. Surface studies have been directed toward analysis of techniques for production of MOS systems that are electrically and thermally stable. Process considerations are described. Increases in stability of MOS capacitor structures of more than two orders of magnitude are reported. A model for second breakdown is presented together with results and a comparison with device behavior. Studies on thermal effects are reported with particular reference to methods of measuring thermal impedance. Both carrier and current densities in a transistor and the temperature distribution across the surfaces of a transistor are discussed. The use of thermal studies to understand device operation and interpret the reliability test data is discussed along with more explicit definitions of thermal failure modes involving temperature sensitive mechanisms. Comparison with experimental data shows good agreement with analytical results.
Descriptors : *SILICON), (*TRANSISTORS, RELIABILITY(ELECTRONICS), OXIDES, STABILITY, SPECTROSCOPY, MOISTURE, DETECTION, ELECTRICAL PROPERTIES, MEASUREMENT, THERMAL PROPERTIES, HEAT TRANSFER.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE