Accession Number : AD0800323
Title : ELIMINATION OF INCLUSIONS FROM FLUX-GROWN CRYSTALS.
Descriptive Note : Report for 15 Nov 65-15 Jun 66,
Corporate Author : AEROSPACE CORP EL SEGUNDO CA LAB OPERATIONS
Personal Author(s) : Chase, A. B. ; Wilcox, W. R.
Report Date : JUN 1966
Pagination or Media Count : 5
Abstract : Crystals grown from solution are frequently flawed by inclusions of solution that has been trapped by the crystal during the growth process. Crystals of ThO2 and ZrSiO4 were placed in a thermal gradient high enough to liquefy the inclusions. This caused the liquid to move through the crystal toward the heat source, thereby removing inclusions from the crystals. (Author)
Descriptors : *ZONE MELTING), (*CRYSTALS, PURIFICATION, CRYSTAL GROWTH, THORIUM COMPOUNDS, OXIDES, ZIRCONIUM COMPOUNDS, SILICATES.
Subject Categories : Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE