Accession Number : AD0800335

Title :   DEVELOPMENT OF A LOW-NOISE MILLIMETER-WAVE PARAMETRIC AMPLIFIER.

Descriptive Note : Interim rept. no. 2, 1 Jan-31 Jul 66,

Corporate Author : CONTROL DATA CORP MELVILLE NY TRG DIV

Personal Author(s) : Kliphuis, J. ; Neuf, D.

Report Date : OCT 1966

Pagination or Media Count : 23

Abstract : A gain of 20 db and an instantaneous bandwidth of 50 MHz was achieved at 70 GHz from a balanced two-port amplifier. The performance of diffused type epitaxial gallium arsenide diodes has been proven superior to that of surface barrier type diodes for millimater wave parametric amplifiers. This is particularly true when each varactor is pumped into the positive bias region. The varactor diode development effort is proceeding on schedule and sample gold plated diffused diodes will be available for tests at 70 GHz and 94 GHz shortly.

Descriptors :   *VARACTOR DIODES), (*PARAMETRIC AMPLIFIERS, (*MILLIMETER WAVES, PARAMETRIC AMPLIFIERS), GALLIUM ALLOYS, ARSENIC ALLOYS, GOLD, PLATING, DIFFUSION, SEMICONDUCTORS, TRANSPORT PROPERTIES, ELECTRICAL PROPERTIES, VERY HIGH FREQUENCY, BANDWIDTH, SURFACE PROPERTIES.

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE