Accession Number : AD0800697

Title :   AVALANCHE MODE PHOTODIODES FOR HETERODYNE TECHNIQUES AT 1.06 MICRONS.

Corporate Author : SPERRY RAND RESEARCH CENTER SUDBURY MA

Personal Author(s) : Kroger, Harry

Report Date : SEP 1966

Pagination or Media Count : 1

Abstract : This report describes developments of techniques leading towards the realization of a 1 GHz bandwidth photodiode, sensitive to 1.06 micron radiation. For this purpose, an avalanche mode germanium photodiode has been designed, capable of internal signal gain. Technology developed for a planar germanium photodiode using silicon nitride masking techniques is described, along with the results of silicon avalanche photodiodes in a wide-band reception system. (Author)

Descriptors :   (*AVALANCHE DIODES, MANUFACTURING), GERMANIUM, GAIN, SILICON COMPOUNDS, NITRIDES, DIFFUSION, ETCHING, INDIUM ALLOYS, BORON ALLOYS, BROADBAND, ELECTROLYTIC POLISHING, VOLTAGE, DETECTORS.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE