Accession Number : AD0801878

Title :   FAILURE MECHANISMS IN MOS TRANSISTORS.

Descriptive Note : Quarterly rept. no. 1, 28 Mar-28 Jun 66,

Corporate Author : MOTOROLA INC PHOENIX AZ SEMICONDUCTOR GROUP

Personal Author(s) : Clark, Lowell ; Forehand, Harry

Report Date : AUG 1966

Pagination or Media Count : 41

Abstract : The main objective of the study is to determine the basic failure mechanisms characteristic of silicon isolated-gate field-effect transistors (IGFET), identify the sources of failure, and develop techniques for reliability screening and stress testing of the finished device. The device selected for Unit Group 1 study is designated MM2103, a p-channel enhancement type IGFET. The instability of the device under the influence of high gate potential which was reported on last month has been observed on similar lab-processed devices. The cause of this instability is under investigation by the R and D group. Of the 10 sample devices undergoing temperature storage, 2 have exceeded the specification limit of 20 percent allowed change from the initial value on the IDSS sub 1 parameter. Step-stress testing has begun, but results are not available. (Author)

Descriptors :   (*TRANSISTORS, FAILURE(ELECTRONICS)), ELECTROSTRICTION, SILICON, SEMICONDUCTORS, RELIABILITY(ELECTRONICS), TEST METHODS, EXPERIMENTAL DATA.

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE