Accession Number : AD0802454
Title : APPLICATION OF SEMICONDUCTOR DEVICES TO HIGH POWER DUPLEXERS.
Descriptive Note : Final rept. 8 Apr 64-8 Apr 66,
Corporate Author : MICROWAVE ASSOCIATES INC BURLINGTON MA
Personal Author(s) : Basken, Paul
Report Date : AUG 1966
Pagination or Media Count : 66
Abstract : A high-power duplexer was constructed in C-band utilizing high-voltage PIN diodes as switching elements. The diodes are arranged to create a 180 degree phase shifter which switches the RF signal from one port of a balanced hybrid circuit to another. Sections of the report are devoted to a theoretical analysis of the phase shift duplexer, to a diode power handling study, and to the experimental work on single-section phase shifters and the 180 degree phase shifter. A two megawatt capability was achieved with a transmit loss of about 1 dB, a receive loss of 1.5 dB and a receiver isolation of 25 dB. The duplexer recovery time is less than one microsecond. (Author)
Descriptors : *DUPLEXERS), (*SEMICONDUCTOR DIODES, C BAND, VOLTAGE, SWITCHING CIRCUITS, PHASE SHIFT CIRCUITS, TEMPERATURE, STANDING WAVE RATIOS.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE