Accession Number : AD0803601
Title : SEMICONDUCTOR LASER ARRAY TECHNIQUES (SEMLAT).
Descriptive Note : Quarterly technical rept. no. 1,
Corporate Author : GENERAL ELECTRIC CO SYRACUSE NY
Personal Author(s) : Collins, N. E. ; Jones, J. E. ; Kim, H. B. ; Mallory, W. R. ; Vuilleumier, R.
Report Date : OCT 1966
Pagination or Media Count : 20
Abstract : This report is on the Semiconductor Laser Array Technique (SEMLAT). The report briefly outlines the initial approach to the cascaded array amplification scheme and describes the preliminary materials investigation and antireflective SiO deposition studies. Effective antireflective coatings have been deposited consistently on single diodes as well as array diodes. A value of the expected gain of these diodes, based on measurement of the threshold current before and after coating, is estimated to be more than 20 times. (Author)
Descriptors : *SEMICONDUCTOR DEVICES), (*LASERS, SEMICONDUCTOR DIODES, ABSORPTION, GALLIUM ALLOYS, ARSENIC ALLOYS, GAIN, SINGLE CRYSTALS, SILICON, OXIDES, FILMS, COATINGS, CRYSTAL GROWTH, DEPOSITION, EMISSIVITY, OPTICAL PUMPING, SPECTRUM ANALYZERS.
Subject Categories : Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE