Accession Number : AD0804481

Title :   ION IMPLANTATION DOPING TECHNIQUES.

Descriptive Note : Interim technical rept. no. 2, 1 Aug-31 Oct 66,

Corporate Author : HUGHES RESEARCH LABS MALIBU CA

Personal Author(s) : Brewer, G. R. ; Marsh, O. J. ; Wilson, R. G. ; Baron, R. ; Bower, R. W.

Report Date : NOV 1966

Pagination or Media Count : 56

Abstract : Ion implantation research and evaluation during this quarter have resulted in a better understanding of deeply penetrating ions (super tails), refinement of dopant density determinations by measurement of Hall mobility, further study of anneal behavior of antimony-implanted silicon, preliminary evaluation of gallium-implanted silicon, development of ion beam scanning to provide larger area implants, and preliminary boron implantations. The improved understanding of the implantation process has resulted in more stringent requirements on the ion sources and implantation systems, requiring a continuing improvement in sources and in the sophistication of implantation process has resulted in more stringent requirements on the ion sources and implantation systems, requiring a continuing improvement in sources and in the sophistication of implantation system designs. Designs of improved systems for higher voltage combined with beam scanning and improved beam-target alignment have begun. (Author)

Descriptors :   *DOPING, *ION BOMBARDMENT, *SEMICONDUCTORS, SILICON, MOBILITY, CARBON, GALLIUM, DENSITY, ANTIMONY, ANNEALING.

Subject Categories : Solid State Physics
      Atomic and Molecular Physics and Spectroscopy

Distribution Statement : APPROVED FOR PUBLIC RELEASE