Accession Number : AD0804491

Title :   RESEARCH AND DEVELOPMENT OF LOCALIZED DEFECTS AND HOT SPOTS IN HIGH VOLTAGE PNPN INVERTER SWITCHES.

Descriptive Note : Quarterly progress rept. no. 2, 1 Sep-1 Dec 66.

Corporate Author : GENERAL ELECTRIC CO AUBURN NY SEMICONDUCTOR PRODUCTS DEPT

Report Date : 01 DEC 1966

Pagination or Media Count : 56

Abstract : This Second Quarterly Report deals with the research and development conducted during the investigation of localized defects and hot spots in high voltage p-n-p-n inverter switches. A possible failure mode due to a p-n-p switching action is discussed together with causes of localized current distributions. Progress in measuring techniques is also reported. (Author)

Descriptors :   (*INVERTER CIRCUITS, VOLTAGE), SILICON CONTROLLED RECTIFIERS, DC TO DC CONVERTERS, DISLOCATIONS, ELECTRIC SWITCHES, THERMAL STABILITY, CIRCUITS, OPTIMIZATION, SHIPS, TRANSFORMERS, FAILURE(MECHANICS), DIFFUSION, IMPURITIES, OSCILLATION, NEGATIVE RESISTANCE CIRCUITS, DOPING, GOLD, SILICON, PERFORMANCE(ENGINEERING), SPECIFICATIONS, REDUCTION, WEIGHT, ELECTRONIC EQUIPMENT.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE