Accession Number : AD0804575

Title :   EFFECT OF COMPOSITIONAL STRESS ON IMPURITY DOPING OF CRYSTALS.

Descriptive Note : Rept. for Feb-Aug 66,

Corporate Author : AEROSPACE CORP EL SEGUNDO CA LABS DIV

Personal Author(s) : Wilcox, William R.

Report Date : OCT 1966

Pagination or Media Count : 19

Abstract : It was found theoretically that compositional stresses can greatly affect the course of impurity doping during crystal growth. The theoretical results were compared with experimental anomalies reported in the prior literature. Perturbations of growth conditions were found to occasionally lead to highly damped oscillations in the doping level. (Author)

Descriptors :   *DOPING), (*CRYSTALS, IMPURITIES, STRESSES, ZONE MELTING, EPITAXIAL GROWTH, EQUILIBRIUM(PHYSIOLOGY).

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE