Accession Number : AD0804841
Title : STUDY AND INVESTIGATION OF THE DEPENDENCE OF SEMICONDUCTOR SURFACE STABILITY ON OXIDE GROWTH.
Descriptive Note : Quarterly rept. no. 1, 4 Apr-30 Jun 66,
Corporate Author : SPRAGUE ELECTRIC CO NORTH ADAMS MA
Personal Author(s) : Lehovec, Kurt ; Lindmayer, Joseph ; Wrigley, Charles
Report Date : DEC 1966
Pagination or Media Count : 68
Abstract : The step relaxation method to obtain information on the depletion layer current, as a preliminary step to an improved analysis of the C-V method for surface states is described. Some preliminary data are given showing large differences in the behavior of various MOS samples. The small observed temperature dependence of the oxide Debye length has been compared to the calculated temperature dependence produced by restricting oxide charge to a single energy level. This comparision makes the curves match when the level is within 50 meV of the Fermi level. Comparative studies of oxide annnealing history, metal deposition technique and type of metal with the resulting type and degree of instability are progressing. In oxides free of ionic impurities the charge stability under stress is controlled by electronic injection between the oxide and the silicon. The injection in turn is controlled by metal-oxide interactions at OH sites, which are now being studied by programming ambients during oxide growth.
Descriptors : (*SEMICONDUCTORS, ELECTRICAL RESISTANCE), SILICON DIOXIDE, SURFACE PROPERTIES, ELECTRODES, METALS, OXIDES, ELECTRIC DISCHARGES, SILICON.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE