Accession Number : AD0805406

Title :   DEVELOPMENT OF A 1-WATT, 2-GHZ SILICON UHF POWER TRANSISTOR.

Descriptive Note : Quarterly rept. no. 4, 1 May-31 Jul 66,

Corporate Author : RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES

Personal Author(s) : McGeough, P. L. ; Lee, H. C.

Report Date : JAN 1967

Pagination or Media Count : 20

Abstract : This report concentrated on the study of the effects of P+ diffusion penetration on UHF performance. A comparison of the results obtained at 2 gigahertz indicated improved performance using the deeper P+ diffusion depth. The design calculations for the required photomasks were completed; a modification of the Type A coaxial package was introduced that provides an increase in the frequency of operation of the packaged transistor; and a new coaxial cavity, incorporating beryllium oxide heat sinking, was designed and resulted in improved 2-gigahertz performance over the previous cavity. (Author)

Descriptors :   (*TRANSISTORS, SILICON), POWER, ULTRAHIGH FREQUENCY, DIFFUSION, CIRCUITS.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE