Accession Number : AD0805407
Title : ION IMPLANTATION JUNCTION TECHNIQUES.
Descriptive Note : Quarterly technical progress rept. no. 3, 1 Aug-31 Oct 66,
Corporate Author : ION PHYSICS CORP BURLINGTON MA
Personal Author(s) : King, Q. J. ; Burrill, J. T. ; Smith, D. ; Harrison, S. ; Solomon, S. J.
Report Date : 31 OCT 1966
Pagination or Media Count : 42
Abstract : The program is primarily directed at the fabrication of high power-to-weight ratio cells with integral coverslips. During this quarter investigations were concentrated on conventional silicon material cells. At a nominal thickness of 8 mils (without coverslip), efficiencies as high as 10.3% (AMO) and P/W ratios of 121 watts/lb have been achieved. At 5 mils, the respective numbers are 9.5% and 181 watts/lb. Eight mil cells with 1.5 integral coverslips were made with efficiencies of 12.3% (tungsten - 2800 K) and P/W ratios of 130 watts/lb (tungsten).
Descriptors : (*SOLAR CELLS, SILICON), MANUFACTURING, POWER, WEIGHT, COSTS, FILMS, THICKNESS.
Subject Categories : Electric Power Production and Distribution
Distribution Statement : APPROVED FOR PUBLIC RELEASE