Accession Number : AD0806737
Title : DEVELOPMENT AND FABRICATION OF SOLID-STATE HIGH-SPEED OPTICAL DETECTORS.
Descriptive Note : Interim engineering rept. no. 1, 15 Aug-15 Nov 66,
Corporate Author : TEXAS INSTRUMENTS INC DALLAS
Personal Author(s) : Shaunfield, Wallace N.
Report Date : DEC 1966
Pagination or Media Count : 20
Abstract : Work began on development and fabrication of a high-speed silicon avalanche photodetector optimized for operation at 0.9 micro meters. During this quarter the work was concentrated on design and fabrication problems. Calculations were made to determine the correct diffusion concentrations. The first diffusion run on completion was found to have edge breakdown. Measurement of impurity concentrations showed that the P-diffusion concentration was too low, causing edge breakdown.
Descriptors : *AVALANCHE DIODES), *PHOTOELECTRIC CELLS(SEMICONDUCTOR)), (*PHOTODIODES, MANUFACTURING, EPITAXIAL GROWTH, DIFFUSION, NOISE(RADIO), ELECTRIC FIELDS, SILICON.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE