Accession Number : AD0806926

Title :   EFFECT OF THE OUTER ELECTRIC FIELD ON THE CONDUCTIVITY OF GALLIUM ARSENIDE (VPLYV ZOVNISHN'OHO ELEKRYCHNOGO POLYA NA PROVIDNIST' ARSENIDU HALIYU).

Descriptive Note : Unedited rough draft translation,

Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OH

Personal Author(s) : Dmytruk, M. L. ; Lyashenko, V. I. ; Sytenko, T. M.

Report Date : 17 NOV 1966

Pagination or Media Count : 16

Abstract : The article briefly describes the status of research on the electric properties of GaAs surfaces and the results of measurements made by the field-effect method in a vacuum of 10 to the -5th power mm Hg at room temperature. Tests were made on low-resistance n-type GaAs, with resistivity 3.3 x 10 to the -2 power - 2 x 10 to the -3rd power ohm-cm (6 samples) and high-resistance p-type with resistivity 121 and 78,000 ohm-cm (2 samples). The amplitude characteristics of the field effect of the p-type Ga As exhibited the usual behavior, with a weakly pronounced minimum. The n-type samples disclosed larger variations of the conductivity induced by the external field, the magnitude of the effect being dependent on the type of surface finish (mechanical finish decreased the effect, etching in alkali left it unchanged). The nature of these changes is unclear. The slow relaxation of the field effect had a nonexponential character. (Author)

Descriptors :   *FIELD EFFECT TRANSISTORS), (*GALLIUM ARSENIDES, MANUFACTURING, ELECTRICAL RESISTANCE, ELECTRICAL CONDUCTIVITY, ELECTRIC FIELDS, ETCHED CRYSTALS, POLARIZATION, SURFACE PROPERTIES.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE