Accession Number : AD0807057
Title : DEVELOPMENT OF A REMOTE CUTOFF MOS FIELD EFFECT TRANSISTOR.
Descriptive Note : Final development rept. no. 5, 10 May 65-10 Aug 66.
Corporate Author : RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
Report Date : 01 DEC 1966
Pagination or Media Count : 133
Abstract : Remote-cutoff MOS devices that were designed exceeded the goals set at the beginning of this contract in nearly all of the electrical performance characteristics. Fifteen samples of Device I (15-kilohertz to 30-megahertz operation) and 15 samples of Device II (200-megahertz to 400-megahertz operation) were delivered to the Department of Navy. Device II had a median power gain of 16.8 dB at 400 megahertz and a median noise figure of 3.7 dB, respectively. The undesired signal for 1-percent cross-modulation distortion varied from 80 to 660 millivolts over the agc range. The objective level was 100 millivolts minimum; the undesired signal was below 100 millivolts only for 2 dB of the 40-dB agc range. Cross-modulation-distortion characteristics for Device I were similar to the characteristics for Device II.
Descriptors : (*FIELD EFFECT TRANSISTORS, DISTORTION), AUTOMATIC GAIN CONTROL, MODULATION, NOISE(RADIO), GATES(CIRCUITS), ATTENUATION.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE