Accession Number : AD0807316

Title :   300 C SEMICONDUCTOR FOR POWER DEVICES.

Descriptive Note : Iterim technical rept. no. 2, 1 Oct - 31 Dec 66,

Corporate Author : RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES

Personal Author(s) : Krassner, L. ; Enstrom, R. E.

Report Date : JAN 1967

Pagination or Media Count : 29

Abstract : Gallium arsenide was chosen as the material for making the 300C operating rectifier. It was shown that epitaxial layers with high-voltage breakdown could be prepared, although not reproducibly. A vapor-glassing surface treatment was worked out also, and a suitable package was designed and ordered. During the period covered by this report, it was found that imperfections in the epitaxial layers caused premature breakdown, and work was started to relate this condition to substrate and growth parameters. The epitaxial layers were capable of supporting over 150 volts in small areas. The major difficulty is in growing large-area, defect-free epitaxial layers. A high-temperature-contact metalizing and mounting system was worked out, and the packages have been delivered. (Author)

Descriptors :   *RECTIFIERS), (*SEMICONDUCTOR DIODES, GALLIUM ARSENIDES, EPITAXIAL GROWTH, VAPOR PLATING, GLASS SEALS, SUBSTRATES, DEFECTS(MATERIALS), FAILURE(ELECTRONICS), HIGH TEMPERATURE.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE