Accession Number : AD0807740

Title :   RAPID ANNEALING IN SILICON TRANSISTORS.

Descriptive Note : Technical rept. Mar-Oct 66,

Corporate Author : HUGHES AIRCRAFT CO FULLERTON CA RADIATION EFFECTS RESEARCH DEPT

Personal Author(s) : Binder, D. ; Butcher, D. T.

Report Date : FEB 1967

Pagination or Media Count : 56

Abstract : Rapid annealing of defects in silicon transistors following a burst of neutrons was analyzed in terms of a physical model involving defect clusters. The data were taken with an apparatus capable of detecting changes less than 1/4 percent and of rapid recovery from ionization effects. A low-temperature experiment with the 2N1613 showed the presence of two stages: a comparatively rapid stage followed by a more gradual one, extending over many decades of time. This was analyzed in terms of a rapid annealing process occurring inside the defect cluster, followed by a second stage controlled by diffusion outside the cluster. A simple square root of t law for the second stage, which agrees with the low-temperature data for the 2N1613 and the room-temperature data for three NPN and two PNP transistors, is derived. Cluster parameters derived from the room-temperature data show some evidence for independence of device type. Electron irradiations showed small recovery effects for beta, but the presence of surface effects made the interpretation in terms of atomic displacements uncertain. (Author)

Descriptors :   *ANNEALING, *SILICON, *TRANSISTORS, NEUTRONS, DAMAGE, RADIATION EFFECTS, PROCESSING, TEST EQUIPMENT, DIFFERENTIAL EQUATIONS, LINEAR ACCELERATORS, DIFFUSION, VOLTAGE, PERFORMANCE(ENGINEERING), ATTENUATION, DEMODULATION, MEASURING INSTRUMENTS, ELECTRICAL IMPEDANCE.

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE