Accession Number : AD0808600

Title :   SEMICONDUCTOR LASER DIGITAL DEVICES.

Descriptive Note : Final rept. 2 Aug 65-31 Aug 66,

Corporate Author : RCA LABS PRINCETON NJ

Personal Author(s) : Kosonocky, Walter F. ; Cornely, Roy H.

Report Date : JAN 1967

Pagination or Media Count : 83

Abstract : GaAs lasers are considered as components for digital circuits. An evaluation is made of GaAs laser materials prepared by solution-regrowth techniques, diffusion of zinc into an n-type substrate, and vapor-phase epitaxy. Developed techniques for the preparation of GaAs laser components and their interconnections are described. These include preparation of electrically isolated, optically coupled laser junctions and consturction of directly coupled GaAs laser devices. Experimental results are presented on the large signal response of GaAs laser amplifiers, saturation of gain in a laser amplifier, quenching of the output of a laser oscillator by an applied optical signal, radiation confinement in GaAs lasers, and the operation of a reverse-biased junction as a saturable absorber in the laser cavity of a GaAs laser oscillator. Preliminary results are given on new GaAs laser material in the form of a multilayer structure prepared by vapor-phase epitaxial growth. (Author)

Descriptors :   *SEMICONDUCTOR DEVICES), (*LASERS, (*GALLIUM ARSENIDES, LASERS), EPITAXIAL GROWTH, DIFFUSION, ZINC, SUBSTRATES, GAIN, ABSORPTION, DOPING, BENDING, AMPLIFIERS, DIGITAL SYSTEMS.

Subject Categories : Lasers and Masers
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE