Accession Number : AD0808670
Title : MICROWAVE DIODE RESEARCH.
Descriptive Note : Interim rept. no. 3, 10 Mar-9 Sep 66,
Corporate Author : WESTERN ELECTRIC CO INC NEW YORK
Personal Author(s) : Ciccolella, D. F. ; Ralston, R. W. ; Rulison, R. L. ; Gibbons, G. ; Josenhans, J. G.
Report Date : JAN 1967
Pagination or Media Count : 52
Abstract : The fabrication and tests of silicon IMPATT oscillators are described. The fabrication procedures include two major departures from previous efforts. These are respectively, the use of normal epitaxial silicon, and utilization of a special epitaxial process to 'grow in' an impurity profile during the epitaxial deposition and, thus, eliminate one of the diffusions normally required in the Read IMPATT diode fabrication process. Substantial improvements in device performance are reported. A detailed description of IMPATT characterization techniques is described. Techniques for obtaining large-signal diode admittances as well as frequency-power-efficiency data are presented. An interesting new development is reported. Germanium IMPATT oscillators have been fabricated with an order of magnitude reduction in noise over that obtained with the best silicon IMPATTs.
Descriptors : *OSCILLATORS), (*SEMICONDUCTOR DIODES, MANUFACTURING, EPITAXIAL GROWTH, SILICON, ADMITTANCE, RADIOFREQUENCY POWER, GERMANIUM, NOISE(RADIO), DIFFUSION, IMPURITIES, ELECTRICAL IMPEDANCE.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE