Accession Number : AD0808872
Title : AVALANCHE MODE PHOTODIODES FOR HETERODYNE TECHNIQUES AT 1.06 MICRONS.
Descriptive Note : Interim rept. no. 3, Oct 66-Jan 67,
Corporate Author : SPERRY RAND RESEARCH CENTER SUDBURY MA
Personal Author(s) : Kroger, Harry
Report Date : JAN 1967
Pagination or Media Count : 16
Abstract : The report describes the development of techniques leading towards realization of a 1 GHz bandwidth photodiode sensitive to 1.06 microns radiation. The improved diffusion and silicon nitride deposition techniques which yield high-quality passivated planar junctions in germanium are described. Of specific importance for the achievement of passivated junctions is the deposition of a virgin nitride layer after the diffusions are complete. Microplasma breakdowns have limited devices to low avalanche gain. (Author)
Descriptors : *INFRARED DETECTORS), (*PHOTODIODES, ULTRAHIGH FREQUENCY, BANDWIDTH, MANUFACTURING, DIFFUSION, DEPOSITION, SILICON COMPOUNDS, NITRIDES, SUBSTRATES, GERMANIUM, DOPING, INDIUM, LASERS, OPTICAL EQUIPMENT.
Subject Categories : Electrical and Electronic Equipment
Infrared Detection and Detectors
Distribution Statement : APPROVED FOR PUBLIC RELEASE