Accession Number : AD0808875
Title : STUDY OF NOISE IN SEMICONDUCTOR DEVICES.
Descriptive Note : Semi-annual technical rept. no. 2, 16 Mar-15 Sep 66,
Corporate Author : MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : VAN DER Ziel, A.
Report Date : FEB 1967
Pagination or Media Count : 183
Abstract : The existing transistor noise theory is adequate for frequencies up to 1000 MHz in u.h.f. transistors if alpha sub dc and alpha sub o are measured and r sub b'b and f sub alpha determined from noise measurements. At high currents I sub E and high frequencies the noise figure F deteriorates as I sub E to the 4th power, as expected from a collector junction saturation mechanism. The dependence of F on V sub cb is explained. Noise measurements are reported on microwave transistors at 2 Gc, on 2N930 transistors and on 2N697 transistors (1/f noise at room temperature). Noise measurements are discussed in p-i-n diodes and in p-n-p-n devices. Noise measurements on junction FET's agree with theory, those on MOS-FET's do not. Noise measurements in GaAs lasers at liquid N2 temperatures give essentially shot noise. The reduction in noise of an FET mixer with h.f. feedback agrees with theory, but the effect was small because of the low conversion transconductance of the device. (Author)
Descriptors : *NOISE(RADIO)), (*TRANSISTORS, (*LASERS, NOISE(RADIO)), (*SEMICONDUCTOR DIODES, NOISE(RADIO)), GALLIUM ALLOYS, ARSENIC ALLOYS, FIELD EFFECT TRANSISTORS, TEMPERATURE, EXTREMELY HIGH FREQUENCY.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE