Accession Number : AD0809148
Title : SEMICONDUCTOR LASER MODULATION TECHNIQUES.
Descriptive Note : Quarterly progress technical rept. no. 2, 31 Jul-31 Oct 66.
Corporate Author : GENERAL ELECTRIC CO SYRACUSE NY
Report Date : FEB 1967
Pagination or Media Count : 4
Abstract : This report describes continuing work on construction of a piezoelectric modulator/gallium-arsenide laser diode package aimed at frequency modulation of a continuously operating laser. Difficulties encountered with repolarization of PZT transducer material after fabrication have led to (1) consideration of a lower temperature fabrication procedure and (2) investigation of high-Curie-temperature piezoelectric materials such as lithium metaniobate. (Author)
Descriptors : (*MODULATORS, PIEZOELECTRIC CRYSTALS), (*LASERS, SEMICONDUCTOR DIODES), OPTICAL RADAR, GALLIUM ARSENIDES, FREQUENCY MODULATION, LITHIUM COMPOUNDS, NIOBATES, PIEZOELECTRIC TRANSDUCERS, POLARIZATION, MANUFACTURING, LEAD COMPOUNDS, TITANATES, ZIRCONATES.
Subject Categories : Electrical and Electronic Equipment
Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE