Accession Number : AD0809148

Title :   SEMICONDUCTOR LASER MODULATION TECHNIQUES.

Descriptive Note : Quarterly progress technical rept. no. 2, 31 Jul-31 Oct 66.

Corporate Author : GENERAL ELECTRIC CO SYRACUSE NY

Report Date : FEB 1967

Pagination or Media Count : 4

Abstract : This report describes continuing work on construction of a piezoelectric modulator/gallium-arsenide laser diode package aimed at frequency modulation of a continuously operating laser. Difficulties encountered with repolarization of PZT transducer material after fabrication have led to (1) consideration of a lower temperature fabrication procedure and (2) investigation of high-Curie-temperature piezoelectric materials such as lithium metaniobate. (Author)

Descriptors :   (*MODULATORS, PIEZOELECTRIC CRYSTALS), (*LASERS, SEMICONDUCTOR DIODES), OPTICAL RADAR, GALLIUM ARSENIDES, FREQUENCY MODULATION, LITHIUM COMPOUNDS, NIOBATES, PIEZOELECTRIC TRANSDUCERS, POLARIZATION, MANUFACTURING, LEAD COMPOUNDS, TITANATES, ZIRCONATES.

Subject Categories : Electrical and Electronic Equipment
      Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE