Accession Number : AD0809194
Title : ION IMPLANTATION DOPING TECHNIQUES.
Descriptive Note : Interim technical rept. no. 3, 1 Nov 66-31 Jan 67,
Corporate Author : HUGHES RESEARCH LABS MALIBU CALIF
Personal Author(s) : Marsh,O. J. ; Wilson,R. G.
Report Date : FEB 1967
Pagination or Media Count : 34
Abstract : Research toward gaining a fundamental understanding of ion implantation processes has been emphasized. An ion beam collimation system was designed which will permit studies with a well-collimated and aligned beam to provide data on deep channeling processes. A series of gallium implantations in silicon were made in order to determine a limit of acceptor concentration and the effect of solid solubility on that limit. Source development continued during the quarter with significant improvements in source current resulting from a better source extraction electrode configuration. (Author)
Descriptors : (*DOPING, *ION BEAMS), (*SILICON, *GALLIUM), SEMICONDUCTORS, ANNEALING, SOLUBILITY, GERMANIUM, MATERIALS, REMOVAL, SILICON DIOXIDE, ANODIC COATINGS
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE