Accession Number : AD0810483

Title :   LOW-NOISE L- BAND (WIDEBAND) TRANSISTOR AMPLIFIER.

Descriptive Note : Rept. no. 8(Final), 1 Jun 64-31 May 66,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV

Personal Author(s) : Read,Leslie W.

Report Date : MAR 1967

Pagination or Media Count : 80

Abstract : This is the final report on the design and fabrication of a wideband microwave balanced amplifier. This amplifier, design for the 1-2 GHz band, uses thin-film components on ceramic substrates. Circuit design of directional couplers and gain modules is discussed, amplifier performance is presented, and the thin-film processes used are explained. It is concluded that this type of amplifier is extremely useful in microwave systems where low noise, low VSWR, and high reliability are desirable. (Author)

Descriptors :   (*TRANSISTOR AMPLIFIERS, *MICROWAVE AMPLIFIERS), (*INTEGRATED CIRCUITS, TRANSISTOR AMPLIFIERS), ULTRAHIGH FREQUENCY, SEMICONDUCTING FILMS, SUBSTRATES, CERAMIC MATERIALS, GAIN, BROADBAND, L BAND, STANDING WAVE RATIOS, GERMANIUM, CAPACITORS, RESISTORS, MANUFACTURING, MODULES(ELECTRONICS), NOISE(RADIO)

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE