Accession Number : AD0811711

Title :   SEMICONDUCTOR LASER ARRAY TECHNIQUES.

Descriptive Note : Quarterly rept. no. 2,

Corporate Author : GENERAL ELECTRIC CO SYRACUSE NY HEAVY MILITARY ELECTRONIC SYSTEMS

Report Date : MAR 1967

Pagination or Media Count : 37

Abstract : This report contains information regarding the work done during the Second Quarter of the Semiconductor Laser Array Technique (SEMLAT) Program. The saturation characteristics of GaAs amplifying devices have been measured and analysed. The good agreement obtained between experiment and theory gives the appropriate background information for designing array amplification schemes. A multi-correlation program between material parameters, junction formation techniques and laser performance has shown Se-doped material to provide, thus far, the most homogeneous emission.

Descriptors :   *LASERS), (*OPTICAL RADAR, (*SEMICONDUCTOR DIODES, MANUFACTURING), GALLIUM ARSENIDES, SELENIUM, DOPING, GAIN, SILICON COMPOUNDS, OXIDES, DIFFUSION BONDING, FIELD EMISSION.

Subject Categories : Lasers and Masers
      Optical Detection and Detectors

Distribution Statement : APPROVED FOR PUBLIC RELEASE