Accession Number : AD0813323
Title : REPORT ON SURFACE STUDIES.
Descriptive Note : Final rept. 19 Oct 65-19 Oct 66,
Corporate Author : TEXAS INSTRUMENTS INC DALLAS
Personal Author(s) : Fewer, D. R. ; Carlson, Harold G.
Report Date : MAR 1967
Pagination or Media Count : 260
Abstract : Some of the variables of processing are examined for formation of metal-oxide-silicon (MOS) structures stable at 175 C under bias of 1,000,000 v/cm of oxide with the metal positive with respect to the silicon. Sodium distributions found in oxides formed by various techniques are determined using neutron activation analysis. Oxides formed on chemically polished surfaces have a high sodium concentration in a thin outer layer of oxide which originates on the polished silicon surface. A clean system using rf heating of a silicon carbide coated graphite slab and water cooled quartz wall permitted vapor etching in HCl-H2 mixtures to remove native oxides, flushing and then using dry oxygen for oxidation. Sodium and phosphorus distributions are compared in oxides diffused with phosphorus oxide. The kinetics of the phosphorus diffusion are explored. A segregation of sodium into the glassy regions of samples diffused at high temperatures is found. From 600 - 1200 C a low level of phosphorus near to solid solubility in oxide is found distributed throughout the oxide. (Author)
Descriptors : *SURFACE PROPERTIES), (*SEMICONDUCTING FILMS, (*SILICON DIOXIDE, DEPOSITION), EVAPORATORS, ELECTRICAL PROPERTIES, SODIUM, DIFFUSION, INTEGRALS, FOILS(MATERIALS), HIGH TEMPERATURE, SEMICONDUCTOR DEVICES, QUARTZ, ELECTROLYSIS, ELECTRICAL RESISTANCE, OXIDES, FILMS, DISTRIBUTION FUNCTIONS, CHEMICAL CONTAMINATION, DEPOSITION, STABILITY, INTERFACES, NEUTRON ACTIVATION, ELECTRON GUNS, CRYSTAL GROWTH, IMPURITIES, PHOSPHORUS, REACTION KINETICS, ETCHING.
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE