Accession Number : AD0814070

Title :   TRANSISTOR, UHF, SILICON, POWER, LINEAR, 50-WATT, 500-MHZ WITH 10-DB POWER GAIN.

Descriptive Note : Semiannual rept. 20 Jun-20 Dec 66,

Corporate Author : RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES

Personal Author(s) : O'Brien, J. F.

Report Date : MAY 1967

Pagination or Media Count : 49

Abstract : The objective of this effort is to produce a transistor capable of delivering 50 watts of output power at 500 megahertz with 10-dB power gain and 50-percent efficiency. The objective will be achieved by using a metal-oxide-metal overlay structure employing integral leads. A proposed structure with the new device geometry is presented. Design characteristics are described. The advantages of employing metal-oxide-metal and integral lead technology are shown. Device development is detailed to illustrate the processing technology that has been performed on a small-area device employed as a test vehicle. A test metal-oxide-metal structure was fabricated, tested, and subjected to high-temperature testing. Results show that the silicon dioxide is an excellent dielectric for the formation of an MOM structure. The proposed package design is discussed and illustrated.

Descriptors :   (*TRANSISTORS, ULTRAHIGH FREQUENCY), SILICON COMPOUNDS, OXIDES, SILICON DIOXIDE, MANUFACTURING, DIELECTRICS, PACKAGING, RADIOFREQUENCY POWER, ELECTRODES, FIXED CONTACTS, DIFFUSION, NICKEL, PLATING, MASKING, THERMAL PROPERTIES, ELECTRICAL RESISTANCE.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE