Accession Number : AD0814810

Title :   A STUDY OF FAILURE MECHANISMS IN SILICON PLANAR EPITAXIAL TRANSISTORS.

Descriptive Note : Final rept. 20 May 65-1 Dec 66,

Corporate Author : FAIRCHILD CAMERA AND INSTRUMENT CORP MOUNTAIN VIEW CA FAIRCHILD SEMICONDUCTOR

Personal Author(s) : Sello, H. ; Blech, I. A. ; Grove, A. S. ; Fitzgerald, D. J. ; Lawrence, J. E.

Report Date : APR 1967

Pagination or Media Count : 252

Abstract : This report covers the entire 18-month period in this study of the mechanisms that lead to failure in silicon n-p-n planar epitaxial transistors. The approach taken was the division of the investigation into specific interest areas, each associated with a part of the transistor structure. The areas included: Oxide and silicon dioxide interface; field induced junctions at the silicon surface; silicon (bulk); and metallization.

Descriptors :   *FAILURE(ELECTRONICS)), (*TRANSISTORS, SILICON, EPITAXIAL GROWTH, FIELD EFFECT TRANSISTORS, METAL FILMS, ALUMINUM, GOLD, DIFFUSION, SILICON DIOXIDE, ELECTRICAL RESISTANCE, HUMIDITY, CRYSTAL DEFECTS, IMPURITIES, SURFACES, SUBSTRATES.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE