Accession Number : AD0814842

Title :   DEVELOPMENT OF A BURIED-GATE POWER FIELD-EFFECT TRANSISTOR.

Descriptive Note : Interim engineering rept. no. 1, 11 Oct 66-10 Jan 67,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV

Personal Author(s) : Bruncke, W. C.

Report Date : 02 MAR 1967

Pagination or Media Count : 25

Abstract : Work began on development of a power FET using the buried-gate concept. During this quarter the work's main emphasis was on mask design and the development of a selective epitaxial process. Epitaxial lines, 12.7 micrometers wide, were selectively deposited with a minimum of extraneous epitaxial growth on the neighboring SiO2 mask. On a 5-ohms centimeters substrate the deposited films had average breakdown voltages of 100 volts, which reduced to 10-20 volts after epitaxial-source deposition. Devices fabricated using this process had triode characteristics because of the resulting channel shape. (Author)

Descriptors :   *EPITAXIAL GROWTH), (*FIELD EFFECT TRANSISTORS, (*MASKING, FIELD EFFECT TRANSISTORS), SILICON COMPOUNDS, MANUFACTURING, DOPING, OXIDES, CHLORIDES, ETCHING.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE