Accession Number : AD0815000
Title : 300 C SEMICONDUCTOR FOR POWER DEVICES.
Descriptive Note : Interim technical rept. no. 3, 1 Jan-31 Mar 67,
Corporate Author : RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
Personal Author(s) : Krassner, L. ; Enstrom, R. E.
Report Date : MAY 1967
Pagination or Media Count : 39
Abstract : During the period covering this report, vapor-phase, epitaxial p-n junctions were grown in gallium arsenide, and the effects of several parameters, including temperature and substrate condition on the junction quality, were studied. Microplasmas still limit the breakdown of large-area diodes (0.100-inch diameter) but for diodes of smaller size (0.030-inch diameter) the breakdown is now limited only by material purity. Improved procedures for etching gallium-arsenide junctions were developed so that the breakdown determined by the material parameters can be measured with surface conditions having a minimum effect. The preservation of such stable surfaces over long periods was not achieved completely, however. Techniques for package mounting diodes, were partly developed, permitting some forward-bias measurements. In addition, some analysis of junction profiles through capacitance-voltage plate was made. (Author)
Descriptors : (*RECTIFIERS, SEMICONDUCTOR DEVICES), VOLTAGE, DEPOSITION, GALLIUM COMPOUNDS, ARSENIDES, CRYSTAL GROWTH, SEMICONDUCTOR DIODES, MANUFACTURING, EPITAXIAL GROWTH, COATINGS, CAPACITANCE, ETCHING, SUBSTRATES.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE