Accession Number : AD0815152
Title : SINGLE CRYSTAL SILICON FILMS ON INSULATING SUBSTRATES (FOLLOW ON PROGRAM).
Descriptive Note : Rept. for 1 Feb-30 Apr 67.
Corporate Author : AUTONETICS ANAHEIM CALIF
Report Date : 31 MAY 1967
Pagination or Media Count : 50
Abstract : Application of the techniques of ion injection doping to the fabrication of junction structures in silicon-on-sapphire has continued, employing both boron and sodium ion beams for acceptor and donor impurity doping, respectively. Some additional details of the injected impurity profile in silicon-on-sapphire relative to that in bulk single-crystal silicon have been acquired. A measure of the rate of diffusion of injected interstitial sodium ions in the silicon-on-sapphire crystal lattice has been obtained; the diffusion appears to be more rapid than in the bulk material. Further experiments with various combinations of masking materials for device fabrication have clearly demonstrated the value of the multilayer mask, especially that with molybdenum over silicon dioxide or over silicon nitride. Corollary efforts on development of improved ion sources for use on this program have produced encouraging results. Additional process development has been performed on a complementary MOS flip-flop memory cell. Power measurements on these cells have shown an average standby dissipation of 0.5 microwatt. Experiments were performed demonstrating a technique for controlling the threshold voltage of a MOS transistor. This technique should be useful where complementary devices are required.
Descriptors : (*SINGLE CRYSTALS, *SILICON), (*FILMS, SILICON), SUBSTRATES, DOPING, SAPPHIRE, BORON, SODIUM, ION BEAMS, IMPURITIES, RELAXATION OSCILLATORS, INTEGRATED CIRCUITS
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE