Accession Number : AD0815829

Title :   DESIGN AND DEVELOPMENT OF INTEGRATED SEMICONDUCTOR CIRCUITS UTILIZING FIELD - EFFECT DEVICES.

Descriptive Note : Interim development rept. Jan-Mar 67.

Corporate Author : WESTINGHOUSE ELECTRIC CORP ELKRIDGE MD MOLECULAR ELECTRONICS DIV

Report Date : 31 MAR 1967

Pagination or Media Count : 34

Abstract : The purpose of this effort is to develop methods of controlling losses in a shift register and to improve the frequency response of a video amplifier. The use of amorphous silicon nitride-silicon dioxide as gate insulator is described. The properties of silicon nitride films are discussed. Stability MNOS diodes are discussed. Preliminary design details of MIS Shift Register circuit are discussed.

Descriptors :   *FIELD EFFECT TRANSISTORS), (*INTEGRATED CIRCUITS, (*SHIFT REGISTERS, INTEGRATED CIRCUITS), SILICON DIOXIDE, NITRIDES, SILICON ALLOYS, INTERMETALLIC COMPOUNDS, SEMICONDUCTING FILMS, VIDEO AMPLIFIERS, SUBSTRATES, DEPOSITION, EPITAXIAL GROWTH, ETCHING, STABILITY.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE