Accession Number : AD0816300
Title : RESEARCH AND DEVELOPMENT OF LOCALIZED DEFECTS AND HOT SPOTS IN HIGH VOLTAGE PNPN INVERTER SWITCHES.
Descriptive Note : Quarterly progress rept. no. 4, 1 Mar-1 Jun 67.
Corporate Author : GENERAL ELECTRIC CO AUBURN NY SEMICONDUCTOR PRODUCTS DEPT
Report Date : 01 JUN 1967
Pagination or Media Count : 48
Abstract : The report deals with the research and development conducted during the investigation of localized defects and hot spots in high voltage p-n-p-n inverter switches. The effects of gallium and phosphorus layers upon the diffusion of gold in silicon are reported. In particular, the distribution of gold in Device 'D' is illustrated. In connection with the Device 'D' failure study, work was performed in relation to (1) the effects of the emitter short patterns, (2) the size and distribution of hot spots, (3) the device photoresponse in the vicinity of a hot spot, and (4) thermal transient measurements at a hot spot. (Author)
Descriptors : *ELECTRONIC SWITCHES), (*SEMICONDUCTOR DEVICES, SILICON CONTROLLED RECTIFIERS, INVERTERS, GOLD, DOPING, DIFFUSION, SILICON, GALLIUM, PHOSPHORUS, THERMAL STABILITY, DEFECTS(MATERIALS), PHOTOSENSITIVITY, RESPONSE, FAILURE(ELECTRONICS).
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE