Accession Number : AD0816315

Title :   A GALLIUM ARSENIDE P-N JUNCTION AVALANCE DIODE OSCILLATOR.

Descriptive Note : Interim rept.,

Corporate Author : CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s) : Melick, Daniel R.

Report Date : MAY 1967

Pagination or Media Count : 70

Abstract : Gallium Arsenide P-N junction avalanche diode oscillators were fabricated from epitaxial material and were found to have pulsed efficiencies as high as 7.9 percent yielding 380 mw of r-f power at 6.8 GHz and output powers as high as 1.3 watts at 3.6 percent efficiency. Most of the work to date has been with silicon diodes. The results achieved here with diodes made from commercially available epitaxial GaAs show pulsed efficiencies superior to any reported GaAs and most reported silicon efficiencies. Various construction techniques were developed and are discussed along with their effects on diode performance. Data showing diode operation in a particular circuit as a function of diode area are presented showing that there is a range of area that gives optimum results. Mechanical tunability of oscillations over a wide frequency range was observed and small signal admittance data over this frequency range is presented to show the regions of negative conductance. (Author)

Descriptors :   *MICROWAVE OSCILLATORS), (*AVALANCHE DIODES, GALLIUM ARSENIDES, EPITAXIAL GROWTH, EFFICIENCY, SUPERHIGH FREQUENCY, RADIOFREQUENCY POWER, MANUFACTURING, ETCHING, DOPING.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE