Accession Number : AD0817614

Title :   THIN SILICON SOLAR CELLS BY ION IMPLANTATION.

Descriptive Note : Final rept. 25 Jan 66-27 Jun 67,

Corporate Author : ION PHYSICS CORP BURLINGTON MA

Personal Author(s) : Burrill, J. T. ; Stirrup, K.

Report Date : JUL 1967

Pagination or Media Count : 70

Abstract : The report describes investigations performed over a 17 month period on the fabrication of thin n-on-p silicon cells using the ion implantation technique. Investigations conducted under this program represent an extension of investigations conducted on Contract AF33(615)-2292 and preceding contracts. Work on dendritic material demonstrated that cell quality is almost completely determined by the starting material. Although material of the highest quality was not available for use on this contract, cells with AMO efficiencies of greater than 9.4% and power-to-weight ratios of greater than 100 watts/lb were fabricated. These values were achieved on cells which had the dendrites left on to provide structural rigidity and form part of the active area. Work on conventional material has demonstrated the feasibility of fabricating silicon solar cells using a reflecting back configuration. The use of this contact will allow thinner, more radiation resistant cells to be fabricated with higher efficiencies due to the second pass of the incident radiation through the cell and thus an increased absorption path nearer the junctions. Cells down to 0.004 inch have been fabricated, using this technique, which showed improved efficiencies under both tungsten and AMO conditions. (Author)

Descriptors :   (*SOLAR CELLS, SILICON), DENDRITIC STRUCTURE, INFRARED SPECTRA, ACCELERATION, DAMAGE, RADIATION EFFECTS, HANDLING, CERAMIC COATINGS, SURFACE PROPERTIES, CRYSTAL STRUCTURE.

Subject Categories : Electric Power Production and Distribution

Distribution Statement : APPROVED FOR PUBLIC RELEASE