Accession Number : AD0817657
Title : HIGH TEMPERATURE REVERSE BIAS TESTING AND FAILURE MECHANISM ANALYSIS OF INTEGRATED CIRCUITS.
Descriptive Note : Final rept.,
Corporate Author : ROME AIR DEVELOPMENT CENTER GRIFFISS AFB NY
Personal Author(s) : Doyle, Edgar A., Jr. ; Kapfer, Vincent C.
Report Date : JUN 1967
Pagination or Media Count : 14
Abstract : Test analysis indicated that, for these circuits, the stress levels of the standard burn-in screen test were inadequate for the effective screening of potential circuit failures. The accelerated HTRB test generated surface inversion failures at both stress temperatures where the time required for circuit degradation decreased with increasing temperature. The majority of the stressed circuits exhibited excellent discrete junction reverse current stability. Based upon these tests, it is concluded that increasing test temperatures will be required to effectively screen out potential reverse current failures in integrated circuits using the relatively cleaner oxides available to present technology. The limited availability and high cost of high temperature integrated circuit test boards may force the manufacturer to conduct high temperature burn-in screen tests on a sampling basis as an alternate approach to insure high-rel circuits. However, the validity of this type of approach to oxide integrity screen testing of high-rel circuits is doubtful.
Descriptors : *FAILURE(ELECTRONICS)), (*INTEGRATED CIRCUITS, RELIABILITY(ELECTRONICS), GATES(CIRCUITS), TEMPERATURE, ELECTRICAL PROPERTIES, ACCELERATED TESTING.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE