Accession Number : AD0818117
Title : DEVELOPMENT OF A BURIED-GATE POWER FIELD-EFFECT TRANSISTOR.
Descriptive Note : Interim engineering rept. no. 2, 11 Jan-10 Apr 67,
Corporate Author : TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV
Personal Author(s) : Bruncke, W. C.
Report Date : JUL 1967
Pagination or Media Count : 24
Abstract : The contract work program was expanded to include evaluation of both the MOSFET and junction FET as well as the buried-gate FET for high-power applications. A P-channel enhancement mode MOSFET was designed. Devices fabricated from these runs had a current capability greater than one amp, with 25-V breakdown voltages. A 27-MHz cutoff frequency was measured I sub D = -0.5 A. (Author)
Descriptors : (*FIELD EFFECT TRANSISTORS, RADIOFREQUENCY POWER), ELECTRODES, PERFORMANCE(ENGINEERING), EPITAXIAL GROWTH, SILICON, EQUATIONS.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE