Accession Number : AD0818117

Title :   DEVELOPMENT OF A BURIED-GATE POWER FIELD-EFFECT TRANSISTOR.

Descriptive Note : Interim engineering rept. no. 2, 11 Jan-10 Apr 67,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV

Personal Author(s) : Bruncke, W. C.

Report Date : JUL 1967

Pagination or Media Count : 24

Abstract : The contract work program was expanded to include evaluation of both the MOSFET and junction FET as well as the buried-gate FET for high-power applications. A P-channel enhancement mode MOSFET was designed. Devices fabricated from these runs had a current capability greater than one amp, with 25-V breakdown voltages. A 27-MHz cutoff frequency was measured I sub D = -0.5 A. (Author)

Descriptors :   (*FIELD EFFECT TRANSISTORS, RADIOFREQUENCY POWER), ELECTRODES, PERFORMANCE(ENGINEERING), EPITAXIAL GROWTH, SILICON, EQUATIONS.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE