Accession Number : AD0818449

Title :   GUNN OSCILLATORS WITH ONE ELECTRODE SPLIT.

Descriptive Note : Interim technical rept.,

Corporate Author : CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s) : Nordbotten, Agne

Report Date : JUL 1967

Pagination or Media Count : 50

Abstract : Gunn diodes with parallel planar contacts on opposite faces of a slab of n-type GaAs are shown to have several electronic controlling effects when one contact is split and dc and rf voltages are applied between the split segments. Switching on and off as well as modulation of the oscillation amplitude could be caused by changing the value of the dc voltage of the split segments near a threshold condition. Increased oscillation frequency was found when both segments are biased above the threshold value and one segment has even dc higher voltage applied to it. The relative electronic tuning was found to be about 20%. Sensitive phase locking of the Gunn oscillations to a weak rf signal, applied between the split segments, was also found, especially when the split electrode was made negative. (Author)

Descriptors :   *SEMICONDUCTOR DEVICES), (*RADIOFREQUENCY OSCILLATORS, SEMICONDUCTOR DIODES, ELECTRODES, GALLIUM ARSENIDES, FIXED CONTACTS, VOLTAGE, RADIOFREQUENCY, DIRECT CURRENT, MODULATION, TUNING DEVICES, PHASE LOCKED SYSTEMS, ULTRAHIGH FREQUENCY.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE