Accession Number : AD0819502

Title :   RELIABILITY TESTING AND PREDICTION TECHNIQUES FOR HIGH POWER SILICON TRANSISTORS.

Descriptive Note : Final rept. 19 Apr 65-19 Oct 66,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS

Personal Author(s) : Fewer, D. R. ; Tomlinson, J. R.

Report Date : JUN 1967

Pagination or Media Count : 368

Abstract : Work performed under this contract is divided into two main parts: (1) a Test and Data Analysis program designed to produce a method for reliability screening; and (2) a Physics of Failure Program on fundamental mechanisms causing device degradation. The test program was divided into three parts, Preliminary, Main and Verification Test Programs. Results of each test program are discussed. Accelerated test results and comparison of fixed stress and step stress results are presented. A non-destructive screening procedure was developed and is contained in this report. Three computer programs, SERF, LINDA 1 and LINDA 2 were developed to assist in the development of the nondestructive screening procedure. The Physics of Failure Program consisted of studies of surfaces and oxides, noise, thermal effects and second breakdown. Extensive analyses of failures were also carried out. Surface studies include the developemnt and analysis of techniques for the production of metal-oxide-silicon (MOS) systems that are electrically and thermally stable. Thermal studies include results of actual temperature measurements of operating transistors using an infrared (IR) microradiometer. Results of electrical and thermal techniques are compared as a tool for measuring thermal resistance. Models to calculate the current and temperature distributions in operating power transistors give results which ar in agreement with experimental data. The second breakdown studies include a discussion of a model for thermal breakdown. (Author)

Descriptors :   *TRANSISTORS), (*RELIABILITY(ELECTRONICS), (*FAILURE(ELECTRONICS), TRANSISTORS), (*NONDESTRUCTIVE TESTING, TRANSISTORS), (*ACCELERATED TESTING, TRANSISTORS), SILICON, SEMICONDUCTORS, THERMAL PROPERTIES, THERMAL STRESSES, DEGRADATION, THERMAL ANALYSIS, SURFACE PROPERTIES, OXIDES, NOISE, TEST METHODS, COMPUTER PROGRAMS.

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE