Accession Number : AD0820729

Title :   300 C SEMICONDUCTOR FOR POWER DEVICES.

Descriptive Note : Interim technical rept. no. 4, 1 Apr-30 Jun 67,

Corporate Author : RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES

Personal Author(s) : Krassner, L.

Report Date : SEP 1967

Pagination or Media Count : 22

Abstract : The purpose of this contract is to design and construct a 50-ampere rectifier capable of operating at an ambient temperature of 300 C. The rectifier must be capable of withstanding a peak inverse voltage of 150 volts. Vapor-phase, epitaxial p-n junctions have been grown of gallium arsenide and gallium arsenide-phosphide alloys. Results were not always consistent, particularly on large-area rectifier pellets. Part of the problem, at least, was related to pits in the grown layers. These pits were associated with low breakdown voltage of small-area diodes, which coexist in the same region with high-breakdown, small-area diodes. No cause has been found for the formation of these pits. Rectifiers were completed and sealed using the etching, metalization, and soldering processes developed. Thermal cycling tests to 300 C were completed successfully, and high-forward-current tests encourage the conclusion that rectifiers with smaller areas than those planned originally can fulfill contract goals.

Descriptors :   (*CRYSTAL RECTIFIERS, POWER EQUIPMENT), HIGH TEMPERATURE, EPITAXIAL GROWTH, GALLIUM ARSENIDES, CRYSTAL DEFECTS, SURFACE PROPERTIES, FAILURE(ELECTRONICS), PHOSPHORUS ALLOYS, SUBSTRATES.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE