Accession Number : AD0821497
Title : STUDY OF NOISE IN SEMICONDUCTOR DEVICES.
Descriptive Note : Special rept. (Part 1 and Part 2),
Corporate Author : MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : VAN DER Ziel, A.
Report Date : AUG 1967
Pagination or Media Count : 184
Abstract : In part I it is shown theoretically that the noise figure of FET mixers can be reduced by h. f. feedback from output to input. In the limit of stability the spot noise figure equals that of the corresponding h. f. amplifier. These theoretical results are verified by experiment, and good agreement between theory and experiment is noted. In part II THE NOISE IN GaAs lasers is death with. It is shown that the only significant noise source is shot noise of the detected photocurrent. The measurements were not accurate enough to detect the very small amount of spontaneous emission noise present near threshold. (Author)
Descriptors : (*FIELD EFFECT TRANSISTORS, NOISE(RADIO)), (*LASERS, NOISE(RADIO)), (*NOISE(RADIO), SEMICONDUCTOR DEVICES), (*CRYSTAL MIXERS, NOISE(RADIO)), SOLID STATE PHYSICS, REDUCTION, STABILITY, HIGH FREQUENCY, FEEDBACK, DIRECT CURRENT, ELECTRICAL CONDUCTIVITY, GALLIUM ARSENIDES, PHOTOELECTRIC EFFECT, THEORY, EXPERIMENTAL DATA.
Subject Categories : Electrical and Electronic Equipment
Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE